Modeling of hall mobility for In2O3 thin film by metal organic chemical vapor deposition
Institute of Science Technology, University of Sanya, Sanya 572000, PR China
2 State Key Lab of Optoelectronics Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, PR China
3 School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, PR China
Accepted: 12 November 2019
Published online: 17 December 2019
In the light of variable temperature (4.2–300 K) Hall-effect measurements a physics-based model for Hall mobility of indium oxide (In2O3), thin film processed by metal organic chemical vapor deposition (MOCVD) has been established. It illustrates the relation among Hall mobility, scattering mechanisms and carrier concentrations exhaustively. Dependence of the potential barrier between grain boundaries on the carrier concentration has been factored in. Concomitantly, account have been taken of exponential tails and the degeneracy in In2O3 film. The proposed model reassured by a comparison of the experimental and theoretical calculated data is feasible and reliable. Results demonstrate that under low carrier densities, the prevailing scattering mechanism would be grain boundary scattering, nevertheless, upon exceeding the concentration of 1019cm−3, Hall mobility is chiefly confined to scattering by ionized impurities.
© EDP Sciences, 2019