https://doi.org/10.1051/epjap/2020190258
Regular Article
Investigation on the luminescent stability in amorphous silicon oxynitride systems★
1
Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R. China
2
College of Electronic and Information Engineering, Jinling Institute of Technology, Nanjing 211169, P.R. China
* e-mail: pzzhang@jit.edu.cn
Received:
1
September
2019
Received in final form:
28
January
2020
Accepted:
17
February
2020
Published online: 9 April 2020
Light induced degradation is a common phenomenon in the photoluminescence (PL) properties of silicon (Si) based light emitting materials. Based on our previous research of highly efficient luminescent amorphous silicon oxynitride (a-SiNxOy) systems, in this work, we intensively investigated the light induced degradation properties of a-SiNxOy, and then further significantly improved the related PL stability. It was notable that the a-SiNxOy films exhibit a light induced time evolutionary metastable PL and have self-recovery properties when exposed in the air after a period. With the purpose of eliminating the light induced degradation and the meta-stable PL in a-SiNxOy films, we employed thermal annealing combined with pulsed laser annealing processes, which makes the film density improved and weak bond angle eliminated, thus obtaining the high stable luminescent a-SiNxOy films in visible range.
© EDP Sciences, 2020