Nanostructured LaFeO3/Si thin films grown by pulsed laser deposition

Mateusz Jędrusik; Christian Turquat; Łukasz Cieniek; Agnieszka Kopia; Christine Leroux

doi:10.1051/epjap/2021210195

2021 Impact factor 1.168

Applied Physics

Open Access

Eur. Phys. J. Appl. Phys. 96, 30301 (2021)
https://doi.org/10.1051/epjap/2021210195

Regular Article

Nanostructured LaFeO₃/Si thin films grown by pulsed laser deposition

Mateusz Jędrusik¹^,2, Christian Turquat¹^*, Łukasz Cieniek², Agnieszka Kopia² and Christine Leroux¹

¹ Université de Toulon, AMU, CNRS, IM2NP, CS 60584, Toulon 83041, France
² Faculty of Metals Engineering and Industrial Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Cracow, Poland

^* e-mail: christian.turquat@univ-tln.fr

Received: 28 August 2021
Received in final form: 12 November 2021
Accepted: 22 November 2021
Published online: 14 December 2021

Abstract

The orthorhombic LaFeO₃ thin films grown by pulsed laser deposition on silicon showed nano-structuration of their surface and preferential crystallographic exposed facets, depending on the deposition temperature. The LaFeO₃ film deposited at 850 °C has two types of grain termination, flat or tip-like, corresponding to two different growth directions, respectively [110] and [200]. However, due to the shape of the termination, the two types of grains expose the same {110} facets. The prepared lanthanum iron oxide films are iron deficient and consequently contains oxygen vacancies, the exact chemical formula being LaFe_0.82O_3-δ.

© Jędrusik et al., Published by EDP Sciences, 2021

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