Eur. Phys. J. Appl. Phys. 99, 9 (2024)
https://doi.org/10.1051/epjap/2024230169

Original Article

Photosensing properties of zinc nitride thin-film transistors fabricated on recyclable plastic substrates

¹ Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla (BUAP), Puebla 72570, Mexico
² Grupo de Electrónica y Semiconductores, Facultad de Ciencias, c/ Francisco Tomás y Valiente 7, Universidad Autónoma de Madrid, Madrid 28049, España

* e-mail: miguel.dominguezj@correo.buap.mx

Received: 2 September 2023
Accepted: 7 February 2024
Published online: 9 April 2024

Abstract

In this work, the characterization of zinc nitride (Zn₃N₂) Thin-film Transistors (TFTs) as phototransistors is presented. Polyethylene terephthalate is used as recyclable plastic substrate. A zinc oxide (ZnO) film is used as passivation layer. The Zn₃N₂ and ZnO films are deposited at room temperature using a magnetron sputtering. The sensitivity, responsivity and detectivity were extracted and analyzed. Interestingly, a relation between the maximum value of detectivity and the threshold voltage V_T was found. Moreover, the electrical characteristics are analyzed after 100 days on air to evaluate the stability under ambient conditions.