https://doi.org/10.1051/epjap:2001010
A spectroscopic charge pumping model in spice for the low dimensional MOSFET's
Institute of Electronics, University of Bejaia, 06000 Bejaia, Algeria
Corresponding author: mounelect@yahoo.fr
Received:
22
August
2000
Revised:
20
July
2001
Accepted:
20
October
2001
Published online: 15 January 2002
We have simulated the experimental spectroscopic charge pumping technique by the implementation of a model in the electrical simulator SPICE3F4. This model takes into account the temperature effect on the geometrical and electrical parameters of the studied transistor. The simulated results are in a good agreement with recent and different experimental results.
PACS: 73.20.-r – Electron states at surfaces and interfaces / 73.20.At – Surface states, band structure, electron density of states / 85.30.De – Semiconductor-device characterization, design, and modeling
© EDP Sciences, 2002
