Eur. Phys. J. AP 23, 5-9 (2003)
https://doi.org/10.1051/epjap:2002113

Identification of hydrogen related defects in proton implanted float-zone silicon

¹ Royal Institute of Technology, Solid State Electronics, Electrum 229, 16440 Kista-Stockholm, Sweden
² Oslo University, Department of Physics, Physical Electronics, PB 1048 Blindern, 0316 Oslo, Norway
³ Australian National University, Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Canberra ACT 0200, Australia
⁴ CNR-IMETEM, Stradale Primosole 50, 95121 Catania, Italy

Corresponding author: b.g.svensson@fys.uio.no

Received: 23 May 2002
Accepted: 18 July 2002
Published online: 29 November 2002

Abstract

Hydrogen related defects in high purity n-type float zone silicon samples have been studied by means of Deep Level Transient Spectroscopy. They were introduced, as well as the characteristic vacancy-oxygen (VO) and divacancy () centers, by MeV proton implantation. Two hydrogen related defect levels were resolved at 0.32 eV and 0.45 eV below the conduction band edge (E_c). Careful annealing studies indicate strongly that a third hydrogen related level, overlapping with the singly negative charge state level of , is also present in the implanted samples. The annealing behavior of the hydrogen related defects has been compared with literature data leading to a rather firm identification. The  eV level originates from a VO center partly saturated with hydrogen (a VOH complex) while the  eV level may be ascribed to a complex involving a monovacancy and a hydrogen atom (a VH complex). The third hydrogen related defect is tentatively ascribed to a complex involving a hydrogen atom and a divacancy (a complex).