The European Physical Journal Applied Physics

Foreword SDE p. 3

Identification of hydrogen related defects in proton implanted float-zone silicon p. 5

Deuteron implantation into hexagonal silicon carbide: defects and deuterium behaviour p. 11

Evolution of He-induced cavities and related defects in silicon studied by direct scattering of channeled particles p. 19

μ-Raman investigations of plasma hydrogenated silicon p. 25

p-type doping by platinum diffusion in low phosphorus doped silicon p. 33

In-situ microscopy study of nanocavity shrinkage in Si under ion beam irradiation p. 39

Impact of gettering by helium implantation on boron and iron segregation p. 41

The role of a top oxide layer in cavities formed by MeV He implantation into Si p. 45

Structure related magnetic properties of MnZn ferrite with ultra-fine grain structure p. 49

Bus bar copper losses computation p. 55

A new numerical technique of electric field determination within dielectric materials plate and cable using the TSM method p. 63