Breakdown voltage analysis of neutron irradiated silicon detectors p. 171
Published online: 03 October 2003
DOI: 10.1051/epjap:2003073-1
The European Physical Journal Applied Physics
Volume 24 / No 3 (December 2003)
Semiconductors and Devices
Influence of an applied electric field on the electronic properties of Si δ-doped GaAs p. 189
Published online: 03 October 2003
DOI: 10.1051/epjap:2003074
Organic Materials and Devices
Degradation kinetics of the spectral emission in polyfluorene light-emitting electro-chemical cells and diodes p. 195
Published online: 16 September 2003
DOI: 10.1051/epjap:2003067
Magnetism, Superconductivity and Related Devices
Study of high intensity magnetic separation process in grooved plate matrix p. 201
Published online: 20 October 2003
DOI: 10.1051/epjap:2003077
Imaging, Microscopy and Spectroscopy
Crystal-field analysis of the Cr4+ absorption and excitation spectrum in LiGaO2 oxide crystal p. 209
Published online: 16 September 2003
DOI: 10.1051/epjap:2003065
Atomic-scale analysis of interfaces in an all-oxide magnetic tunnel junction p. 215
Published online: 03 October 2003
DOI: 10.1051/epjap:2003071
Identification of physical effects in flying spot photothermal non-destructive testing p. 223
Published online: 25 November 2003
DOI: 10.1051/epjap:2003081
Instrumentation and Metrology
Calibration of a 2 dimensional hydrogenated amorphous silicon thin film position sensitive detector (2D a-Si:H TFPSD) p. 231
Published online: 03 October 2003
DOI: 10.1051/epjap:2003072
