Eur. Phys. J. Appl. Phys. 27, 313-316 (2004)
https://doi.org/10.1051/epjap:2004056

Investigation of recombination processes involving defect-related states in (Ga,In)(As,Sb,N) compounds

¹ Institute of Physics, Wroclaw University of Technology Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
² Laboratoire de Photonique et de Nanostructures, CNRS Route de Nozay, 91460 Marcoussis, France

Corresponding author: robert.kudrawiec@pwr.wroc.pl

Received: 18 August 2003
Accepted: 28 January 2004
Published online: 15 July 2004

Abstract

Recombination processes in GaAsN, GaInAsN, and GaAsSbN compounds have been analysed and compared. The following properties like: broad photoluminescence band at energy of ~ 0.85 eV, an emission band aproximately 80 meV below band gap energy, and annealing-induced blue shift of the energy gap have been found for all three compounds. In order to explain these features a simple band gap diagram with N defect-related levels close to conduction band edge and fluctuations in the energy of the conduction band minimum has been proposed.