The European Physical Journal Applied Physics (EPJ AP)

Free Access

Editorial

Preface for DRIP X proceedings p. 7

Jean-Pierre Landesman (Chairman) and Paul C. Montgomery (co-Chairman)

Published online: 15 July 2004

DOI: 10.1051/epjap:2004187

Invited papers

Physical properties of two dimensional nets of quantum InGaAs wires p. 9

L. K. Orlov, N. L. Ivina and N. A. Alyabina

Published online: 15 July 2004

DOI: 10.1051/epjap:2004064

Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM p. 13

T. Umeda, A. Toda and Y. Mochizuki

Published online: 15 July 2004

DOI: 10.1051/epjap:2004123

Ultra thin gate oxide characterization p. 21

D. Roy, S. Bruyere, D. Rideau, F. Gilibert, L. Giguerre, F. Monsieur, G. Gouget and P. Scheer

Published online: 15 July 2004

DOI: 10.1051/epjap:2004072

Defects in SiC substrates and epitaxial layers affecting semiconductor device performance p. 29

St. G. Müller, J. J. Sumakeris, M. F. Brady, R. C. Glass, H. McD. Hobgood, J. R. Jenny, R. Leonard, D. P. Malta, M. J. Paisley, A. R. Powell et al. (5 more)

Published online: 15 July 2004

DOI: 10.1051/epjap:2004085

Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods p. 37

J. L. Weyher and L. Macht

Published online: 15 July 2004

DOI: 10.1051/epjap:2004092

Non-destructive optical methods for assessing defects in production of Si or SiGe materials p. 43

V. Higgs, N. Laurent, C. Fellous and D. Dutarte

Published online: 15 July 2004

DOI: 10.1051/epjap:2004075

Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM p. 49

A. Armigliato, R. Balboni and S. Frabboni

Published online: 15 July 2004

DOI: 10.1051/epjap:2004132

Defect mapping in full-size multi-crystalline Si wafers p. 55

S. Ostapenko and M. Romero

Published online: 15 July 2004

DOI: 10.1051/epjap:2004042

From photon emission microscopy to Raman spectroscopy: Failure analysis in microelectronics p. 59

I. De Wolf and M. Rasras

Published online: 15 July 2004

DOI: 10.1051/epjap:2004073

Spectroscopic techniques for the assessment of optoelectronic materials: application to laser diodes p. 67

J. Jiménez, E. Cánovas and M. Avella

Published online: 15 July 2004

DOI: 10.1051/epjap:2004076

Nanostructures and near-field probe techniques 1

Resonant excitation of Er ion luminescence in a nanocrystalline silicon matrix p. 75

J. A. García, R. Plugaru, B. Méndez, J. Piqueras and T. J. Tate

Published online: 15 July 2004

DOI: 10.1051/epjap:2004083

Cathodoluminescence microanalysis of porous GaP and InP structures p. 81

I. M. Tiginyanu, S. Langa, L. Sirbu, E. Monaico, M. A. Stevens-Kalceff and H. Föll

Published online: 15 July 2004

DOI: 10.1051/epjap:2004043

Characteristics of FeSi₂ quantum dots on silicon p. 85

L. Dózsa, E. Horváth, G. Molnár, A. L. Tóth, Z. Vértesy, E. Vázsonyi and G. Petö

Published online: 15 July 2004

DOI: 10.1051/epjap:2004115

Structural and optical characterization of a dispersion of nanocavities in a crystalline silicon matrix p. 89

E. Leoni, R. El Bouyadi, L. Martinelli, G. Regula, E. Ntsoenzok, B. Pichaud and S Pizzini

Published online: 15 July 2004

DOI: 10.1051/epjap:2004145

Nanostructures and near-field probe techniques 2

Lateral conductivity in GaAs/InAs quantum dot structures p. 93

L. Dózsa, A. L. Tóth, Zs. J Horváth, P. Hubík, J. Krištofik, J. J. Mareš, E. Gombia, R. Mosca, S. Franchi and P. Frigeri

Published online: 15 July 2004

DOI: 10.1051/epjap:2004113

Light induced contrast in Kelvin Force Microscopy of GaN epilayers p. 97

R. Bozek, K. Pakula and J. Baranowski

Published online: 15 July 2004

DOI: 10.1051/epjap:2004116

Atomic force microscopy: a powerful tool for surface defect and morphology inspection in semiconductor industry p. 101

G. Borionetti, A. Bazzali and R. Orizio

Published online: 15 July 2004

DOI: 10.1051/epjap:2004129

Cathodoluminescence study of widegap-semiconductor nanowires p. 107

T. Sekiguchi, Q. Liu, T. Tanaka, J. Hu, Y. Zhu and Y. Bando

Published online: 15 July 2004

DOI: 10.1051/epjap:2004062

Defects in silicon

Transformation behavior of metastable defects induced in n-type silicon by hydrogen implantation p. 111

Y. Tokuda, T. Sugiyama, S. Kanazawa, H. Iwata and M. Ishiko

Published online: 15 July 2004

DOI: 10.1051/epjap:2004114

Study of the defects in oxygen implanted silicon subjected to neutron irradiation and high pressure annealing p. 115

W. Jung, M. Kaniewska, A. Misiuk and C. A. Londos

Published online: 15 July 2004

DOI: 10.1051/epjap:2004109

Aluminum gettering in photovoltaic silicon p. 119

J. Chen, D. Yang, X. Wang, D. Que and M. Kittler

Published online: 15 July 2004

DOI: 10.1051/epjap:2004040

Dislocation luminescence in plastically deformed silicon crystals: effect of dislocation intersection and oxygen decoration p. 123

E. Leoni, S. Binetti, B. Pichaud and S. Pizzini

Published online: 15 July 2004

DOI: 10.1051/epjap:2004146

Diminution of the activity of B atoms by H-induced defects in H₂ and B₂H₆ co-implanted Si p. 129

Katsuhiro Yokota, Syuusaku Nakase, Kazuhiro Nakamura, Fumiyoshi Miyashita, Masayasu Tannjou, Shigeki Sakai and Hiromichi Takano

Published online: 15 July 2004

DOI: 10.1051/epjap:2004082

Electron irradiation effect on thermal donors in CZ-Si p. 133

K. Takakura, H. Ohyama, H. Murakawa, T. Yoshida, J. M. Rafí, R. Job, A. Ulyashin, E. Simoen and C. Claeys

Published online: 15 July 2004

DOI: 10.1051/epjap:2004058

Characterization of metastable defects in hydrogen-implanted n-type silicon p. 137

T. Sugiyama, Y. Tokuda, S. Kanazawa and M. Ishiko

Published online: 15 July 2004

DOI: 10.1051/epjap:2004074

Unusual properties of C-T characteristics of hydrogen implanted and annealed Si p. 141

M. Kaniewska, W. Jung and I. V. Antonova

Published online: 15 July 2004

DOI: 10.1051/epjap:2004126

Thermoelectric properties of Czochralski-grown silicon at high pressure up to 16 GPa p. 145

V. V. Shchennikov, S. V. Gudina, A. Misiuk, S. N. Shamin and S. V. Ovsyannikov

Published online: 15 July 2004

DOI: 10.1051/epjap:2004131

Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing p. 149

D. Klinger, J. Auleytner, D. Żymierska, B. Kozankiewicz, A. Barcz, L. Nowicki and A. Stonert

Published online: 15 July 2004

DOI: 10.1051/epjap:2004133

Defect-induced birefringence in crystalline silicon ingots p. 155

M. Yamada, N. Zui and T. Chu

Published online: 15 July 2004

DOI: 10.1051/epjap:2004049

Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafers p. 159

V. D. Akhmetov, H. Richter, W. Seifert, O. Lysytskiy, R. Wahlich, T. Müller and M. Reiche

Published online: 15 July 2004

DOI: 10.1051/epjap:2004084

Calculation of boron segregation at the Si(100)/SiO₂ interface p. 163

M. Furuhashi, T. Hirose, H. Tsuji, M. Tachi and K. Taniguchi

Published online: 15 July 2004

DOI: 10.1051/epjap:2004136

Electrical properties

Annealing ambient controlled deep defect formation in InP p. 167

Y. W. Zhao, Z. Y. Dong, M. L. Duan, W. R. Sun, Y. P. Zeng, N. F. Sun and T. N. Sun

Published online: 15 July 2004

DOI: 10.1051/epjap:2004096

Investigation of compensation defect centres in semi-insulating InP crystals p. 171

P. Kaminski, M. Pawlowski, R. Kozłowski, B. Surma, F. Dubecky, M. Yamada and M. Fukuzawa

Published online: 15 July 2004

DOI: 10.1051/epjap:2004119-1

Effect of rare earth addition on GaAs-based layers grown by liquid phase epitaxy p. 177

S. I. Krukovsky, V. M. Popov, R. K. Savkina and A. B. Smirnov

Published online: 15 July 2004

DOI: 10.1051/epjap:2004135

Nonequilibrium carrier dynamics in heavily p-doped GaAs p. 181

K. Jarasiunas, R. Aleksiejunas, T. Malinauskas, V. Gudelis, M. Sudzius, A. Maaßdorf, F. Brunner and M. Weyers

Published online: 15 July 2004

DOI: 10.1051/epjap:2004140

Quantitative analysis of low-frequency current oscillation in semi-insulating GaAs p. 185

M. Kiyama, M. Yamada and M. Tatsumi

Published online: 15 July 2004

DOI: 10.1051/epjap:2004150

Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures p. 189

Zs. J. Horváth, L. K. Orlov, V. Rakovics, N. L. Ivina, A. L. Tóth, E. S. Demidov, F. Riesz, V. I. Vdovin and Z. Pászti

Published online: 15 July 2004

DOI: 10.1051/epjap:2004106

GaN epitaxial layers on inhomogeneous buffer layer: electrical and optical properties p. 193

C. Grazzi, A. Castaldini, A. Cavallini, H. P. D. Schenk, P. Gibart and H. P. Strunk

Published online: 15 July 2004

DOI: 10.1051/epjap:2004117

Study of indium phosphide wafers treated by long time annealing at high temperatures p. 197

K. Zdansky, L. Pekarek and P. Hlidek

Published online: 15 July 2004

DOI: 10.1051/epjap:2004118

Capture kinetics at dislocation-related deep levels in III-V heterostructures p. 201

O. Yastrubchak, T. Wosinski, A. Makosa, T. Figielski, S. Porowski, I. Grzegory, R. Czernecki and P. Perlin

Published online: 15 July 2004

DOI: 10.1051/epjap:2004139

Morphology and electrical properties of Pb_1−xCd_xTe/CdTe heterostructures p. 207

E. Saucedo, V. Corregidor, L. Fornaro, N. V. Sochinskii, J. Silveira and E. Diéguez

Published online: 15 July 2004

DOI: 10.1051/epjap:2004141

DLTS study of deep centers created by Ar-ion bombardment in n- and p-type MBE AlGaAs p. 213

M. Kaniewska, J. Sadowski and M. Guziewicz

Published online: 15 July 2004

DOI: 10.1051/epjap:2004127

Determination of localized trap parameters in organic semiconductors using charge based deep level transient spectroscopy (Q-DLTS) p. 219

T. P. Nguyen, J. Ip, O. Gaudin and R. B. Jackman

Published online: 15 July 2004

DOI: 10.1051/epjap:2004079

Oxygen in GaAs and its relation to the EL3 defect investigated by TSC and PICTS p. 223

A. Wohlrab, B. Gründig-Wendrock, M. Jurisch, F.-M. Kiessling and J. R. Niklas

Published online: 15 July 2004

DOI: 10.1051/epjap:2004148

Defects in wide bandgap materials 1

Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers p. 227

C. Díaz-Guerra and J. Piqueras

Published online: 15 July 2004

DOI: 10.1051/epjap:2004091

Structural characterisation of 4H-SiC substrates by cathodoluminescence and X-ray topography p. 231

P. Hidalgo, L. Ottaviani, H. Idrissi, M. Lancin, S. Martinuzzi and B. Pichaud

Published online: 15 July 2004

DOI: 10.1051/epjap:2004100

Microscopic defects and homogeneity investigations in 4H-SiC epitaxial wafers by UV scanning photoluminescence spectroscopy p. 235

I. El Harrouni, J.-M. Bluet, D. Ziane, C. Sartel and G. Guillot

Published online: 15 July 2004

DOI: 10.1051/epjap:2004105

Structural and electrical characterization of n⁺-type ion-implanted 6H-SiC p. 239

D. Goghero, F. Giannazzo, V. Raineri, P. Musumeci and L. Calcagno

Published online: 15 July 2004

DOI: 10.1051/epjap:2004112

Stacking faults in heavily nitrogen doped 4H-SiC p. 243

K. Irmscher, J. Doerschel, H. -J. Rost, D. Schulz, D. Siche, M. Nerding and H. P. Strunk

Published online: 15 July 2004

DOI: 10.1051/epjap:2004057

Defects in wide bandgap materials 2

Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures p. 247

G. Kamler, J. Borysiuk, J. L. Weyher, A. Presz, M. Woźniak and I. Grzegory

Published online: 15 July 2004

DOI: 10.1051/epjap:2004103

Phonon assignments in GaN bulk p. 251

H. W. Kunert

Published online: 15 July 2004

DOI: 10.1051/epjap:2004093

TEM observation of nanopipes in heteroepitaxial GaN p. 255

E. Jezierska, J. L. Weyher, M. Rudzinski and J. Borysiuk

Published online: 15 July 2004

DOI: 10.1051/epjap:2004061

Pyramidal defects in highly Mg-doped GaN: atomic structure and influence on optoelectronic properties p. 259

M. Leroux, P. Vennéguès, S. Dalmasso, P. de Mierry, P. Lorenzini, B. Damilano, B. Beaumont, P. Gibart and J. Massies

Published online: 15 July 2004

DOI: 10.1051/epjap:2004119-2

Plastic relaxation through buried cracks in AlGaN/GaN heterostructures p. 263

J.-M. Bethoux, P. Vennéguès, M. Laügt and P. De Mierry

Published online: 15 July 2004

DOI: 10.1051/epjap:2004119-3

Optical characterization of bulk GaN silicon and magnesium doped: as grown, hydrogen implanted, and annealed p. 267

H. W. Kunert, D. Dale, L. C. Prinsloo, M. Hayes, J. Barnas, J. B. Malherbe, D. J. Brink, A. I. Machatine and K. M. Haile

Published online: 15 July 2004

DOI: 10.1051/epjap:2004119-4

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well p. 271

N. Kamata, H. Klausing, F. Fedler, D. Mistele, J. Aderhold, O. K. Semchinova, J. Graul, T. Someya and Y. Arakawa

Published online: 15 July 2004

DOI: 10.1051/epjap:2004128

Nanopipes in GaN: photo-etching and TEM study p. 275

S. Lazar, J L Weyher, L. Macht, F. D. Tichelaar and H. W. Zandbergen

Published online: 15 July 2004

DOI: 10.1051/epjap:2004047

Spectroscopic techniques

Raman investigation of stress and phase transformation induced in silicon by indentation at high temperatures p. 279

S. Kouteva-Arguirova, V. Orlov, W. Seifert, J. Reif and H. Richter

Published online: 15 July 2004

DOI: 10.1051/epjap:2004144

Luminescence and EPR studies of defects in Si-SiO₂ films p. 285

M. Baran, B. Bulakh, N. Korsunska, L. Khomenkova and J. Jedrzejewski

Published online: 15 July 2004

DOI: 10.1051/epjap:2004089

Scanning room temperature photoluminescence in SiN_x:H layers p. 289

I. Tarasov, M. Dybiec, S. Ostapenko, A. Rohatgi, V. Yelundur and A. M. Gabor

Published online: 15 July 2004

DOI: 10.1051/epjap:2004046

Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors p. 293

R. Aubry, C. Dua, J.-C. Jacquet, F. Lemaire, P. Galtier, B. Dessertenne, Y. Cordier, M. -A. DiForte-Poisson and S. L. Delage

Published online: 15 July 2004

DOI: 10.1051/epjap:2004055

Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy p. 297

Xiaoling Ye, Y. H. Chen, Bo Xu, Y. P. Zeng and Z. G. Wang

Published online: 15 July 2004

DOI: 10.1051/epjap:2004080

Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods p. 301

A. Misiuk, B. Surma and J. Bak-Misiuk

Published online: 15 July 2004

DOI: 10.1051/epjap:2003073

The influence of crystal imperfections on the shape of exciton emission spectrum in ZnO single crystals p. 305

B. Bulakh, L. Khomenkova, V. Kushnirenko and I. Markevich

Published online: 15 July 2004

DOI: 10.1051/epjap:2004090

Scattering tensors for semiconductors of C⁴_6v–P6₃ mc space group: GaN, ZnO, CdS, ZnS, and BeO p. 309

H. W. Kunert

Published online: 15 July 2004

DOI: 10.1051/epjap:2004045

Investigation of recombination processes involving defect-related states in (Ga,In)(As,Sb,N) compounds p. 313

R. Kudrawiec, G. Sek, J. Misiewicz, L. H. Li and J. C. Harmand

Published online: 15 July 2004

DOI: 10.1051/epjap:2004056

Mössbauer spectroscopy on Fe impurities in diamond p. 317

G. Weyer, H. P. Gunnlaugsson, M. Dietrich, H. Fynbo, K. Bharuth-Ram and the ISOLDE Collaboration

Published online: 15 July 2004

DOI: 10.1051/epjap:2004060

Manifestation of defects in phonon spectra of binary zinc-blende compounds p. 321

J. Polit, E. M. Sheregii, J. Cebulski, M. Pociask, A. Kisiel, A. Mycielski, B. V. Robouch, E. Burattini, A. Marcelli, M. Cestelli Guidi et al. (3 more)

Published online: 15 July 2004

DOI: 10.1051/epjap:2004078

Raman scattering characterization of residual strain and alloy composition in bulk Si_1−xGe_x crystal p. 325

M. R. Islam, M. Yamada, N. V. Abrosimov, M. Kiyama and M. Tatsumi

Published online: 15 July 2004

DOI: 10.1051/epjap:2004124

Electron beam methods

Investigation of silicon oxynitride and amorphous silicon multilayers p. 329

M. Serenyi and C. Frigeri

Published online: 15 July 2004

DOI: 10.1051/epjap:2004119-5

Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures p. 333

O. Martínez, C. Pelosi, G. Attolini, E. Martín, L. F. Sanz and J. Jiménez

Published online: 15 July 2004

DOI: 10.1051/epjap:2004119-6

Study of dislocations in strained-Si/Si_0.8Ge_0.2 heterostructures by EBIC, TEM and etching techniques p. 337

X. L. Yuan, T. Sekiguchi, S. G. Ri and S. Ito

Published online: 15 July 2004

DOI: 10.1051/epjap:2004119-7

Growth of ultra-thin and highly relaxed SiGe layers under in-situ introduction of point defects p. 341

K. Lyutovich, M. Oehme and F. Ernst

Published online: 15 July 2004

DOI: 10.1051/epjap:2004051

Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs p. 345

G. Salviati, F. Rossi, N. Armani, M. Pavesi, M. Manfredi, G. Meneghesso, E. Zanoni, A. Castaldini and A. Cavallini

Published online: 15 July 2004

DOI: 10.1051/epjap:2004066

Anomalous electrical properties of dislocation slip plane in Si p. 349

V. G. Eremenko and E. B. Yakimov

Published online: 15 July 2004

DOI: 10.1051/epjap:2004149

Defect mapping over large area wafers

Comparative study on residual strain profiles in GaAs substrates grown by LEC and VB techniques p. 353

T. Kawase, M. Tatsumi, M. Fukuzawa and M. Yamada

Published online: 15 July 2004

DOI: 10.1051/epjap:2004147

Quantitative determination of the doping level distribution in n-type GaAs using absorption mapping p. 357

P. J. Wellmann, A. Albrecht, U. Künecke, B. Birkmann, G. Mueller and M. Jurisch

Published online: 15 July 2004

DOI: 10.1051/epjap:2004041

Contact-free investigation of the EL2-defect in the surface of GaAs wafers p. 363

B. Gründig-Wendrock, K. Dornich, T. Hahn, U. Kretzer and J. R. Niklas

Published online: 15 July 2004

DOI: 10.1051/epjap:2004111

Multi-techniques investigations

Defect imaging in ultra-thin SiGe (100) strain relaxed buffers p. 367

J. Werner, K. Lyutovich and C. P. Parry

Published online: 15 July 2004

DOI: 10.1051/epjap:200373

Production of structurally perfect single crystals of CdTe and CdZnTe p. 371

Yu. M. Ivanov, V. V. Artemov, V. M. Kanevsky, A. N. Polyakov, V. S. Chudakov, E. M. Pashaev and R. A. Senin

Published online: 15 July 2004

DOI: 10.1051/epjap:2004086

Ultrasonically stimulated temperature rise around dislocation: extended defect mapping and imaging p. 375

R. K. Savkina, A. B. Smirnov, V. V. Tetyorkin and N. M. Krolevec

Published online: 15 July 2004

DOI: 10.1051/epjap:2004125

In-depth analysis of the interfaces in InGaP/GaAs heterosystems p. 379

C. Pelosi, G. Attolini, C. Frigeri, M. Bersani, D. Giubertoni, L. Vanzetti and R. Kudela

Published online: 15 July 2004

DOI: 10.1051/epjap:2004143

Error analysis of Makyoh-topography surface height profile measurements p. 385

I. E. Lukács and F. Riesz

Published online: 15 July 2004

DOI: 10.1051/epjap:2004107

High quality multicrystalline silicon grown by multi-stage solidification control method p. 389

S. Nara, T. Sekiguchi and J. Chen

Published online: 15 July 2004

DOI: 10.1051/epjap:2004063

Optical second harmonic imaging: a versatile tool to investigate semiconductor surfaces and interfaces p. 393

T. Scheidt, E. G. Rohwer, H. M. von Bergmann and H. Stafast

Published online: 15 July 2004

DOI: 10.1051/epjap:2004069

Evaluation of small scattering defects densities by laser scattering tomography: application to levitated glasses p. 399

P. Gall-Borrut, D. Perret, B. Drevet, P. Falgayrettes, L. Nativel and M. Castagne

Published online: 15 July 2004

DOI: 10.1051/epjap:2004070

Influence of long-term defect diffusion on HgCdTe electronic structure p. 403

M. Pociask, B. Pukowska, A. Kisiel, E. M. Sheregii and N. N. Berchenko

Published online: 15 July 2004

DOI: 10.1051/epjap:2004077

AFM and XRD studies of GaAs surface after anisotropic etching p. 407

N. L. Dmitruk, V. P. Kladko, R. V. Konakova and A. V. Karimov

Published online: 15 July 2004

DOI: 10.1051/epjap:2004119-8

3D analysis of buried interfaces using interference microscopy p. 411

A. Benatmane and P. C. Montgomery

Published online: 15 July 2004

DOI: 10.1051/epjap:2004119-9

Effect of high pressure-temperature on silicon layered structures as determined by X-ray diffraction and electron microscopy p. 415

J. Bak-Misiuk, A. Misiuk, J. Ratajczak, A. Shalimov, I. Antonova and J. Trela

Published online: 15 July 2004

DOI: 10.1051/epjap:2004119-10

Application of the Kim & Chair viscosity model to molten binary GaSb and InSb semiconductors p. 419

J. Vincent, V. Bermúdez and E. Diéguez

Published online: 15 July 2004

DOI: 10.1051/epjap:2004102

Formation of Al_xGa_1−xSb films over GaSb substrates by Al diffusion p. 423

C. M. Ruiz, N. P. Barradas, E. Alves, J. L. Plaza, V. Bermúdez and E. Diéguez

Published online: 15 July 2004

DOI: 10.1051/epjap:2004130

Some structural aspects of Pb_xCd_1−xTe bulk material p. 427

E. Saucedo, L. Fornaro, V. Corregidor and E. Diéguez

Published online: 15 July 2004

DOI: 10.1051/epjap:2004142

Wavy growth and related defects in strain-balanced multi-quantum wells for photovoltaic devices p. 431

L. Nasi, C. Ferrari, A. Lanzi and L. Lazzarini

Published online: 15 July 2004

DOI: 10.1051/epjap:2004068

Low temperature drive-in of surface-deposited copper in silicon wafers p. 435

M. L. Polignano, D. Caputo, C. Carpanese, G. Salvà and L. Vanzetti

Published online: 15 July 2004

DOI: 10.1051/epjap:2004138

X-ray based techniques

Characterization of SOI wafers by synchrotron X-ray topography p. 439

T. Shimura, K. Fukuda, K. Yasutake and M. Umeno

Published online: 15 July 2004

DOI: 10.1051/epjap:2004067

The use of neighbourhood intensity comparisons, morphological gradients and Fourier analysis for automated precipitate counting & Pendellösung fringe analysis in X-ray topography p. 443

G. Murphy, P. F. Whelan, P. J. McNally, T. Tuomi and R. Simon

Published online: 15 July 2004

DOI: 10.1051/epjap:2004087

Photoluminescence and X-ray topography measurements on oxidation-induced stacking faults in silicon wafers p. 447

H. Kakui, M. Fukuzawa, Y. Shiraishi and M. Yamada

Published online: 15 July 2004

DOI: 10.1051/epjap:2004104

Defects in SC lasers and other devices

Simultaneous quantitative determination of strain and defect profiles within the active region along high-power diode laser bars by micro-photocurrent mapping p. 451

A. Gerhardt, J. W. Tomm, S. Schwirzke-Schaaf, J. Nagle, M. Oudart and Y. Sainte-Marie

Published online: 15 July 2004

DOI: 10.1051/epjap:2004098

Imaging of spontaneous emission from 980 nm tapered lasers with windowed N-contacts p. 455

S. Bull, J. G. Wykes, A. V. Andrianov, J. J. Lim, L. Borruel, S. Sujecki, S. C. Auzanneau, M. Calligaro, M. Krakowski, I. Esquivias and E. C. Larkins

Published online: 15 July 2004

DOI: 10.1051/epjap:2004059

Quantitative spectroscopic strain analysis of AlGaAs-based high-power diode laser devices p. 461

J. W. Tomm, A. Gerhardt, M. L. Biermann and J. P. Holland

Published online: 15 July 2004

DOI: 10.1051/epjap:2004097

Effect of the p⁺-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers p. 465

M. Pommiès, M. Avella, G. Patriarche, M. Bettiati, G. Hallais and J. Jiménez

Published online: 15 July 2004

DOI: 10.1051/epjap:2004052

The study of strain and defects in high power laser diodes by spectroscopically resolved photoluminescence microscopy p. 469

S. Bull, A. V. Andrianov, I. Harrison and E. C. Larkins

Published online: 15 July 2004

DOI: 10.1051/epjap:2004065

Backside failure analysis of GaAs MMIC ASICs p. 475

F. Beaudoin, D. Carisetti, J. C. Clement, R. Desplats and P. Perdu

Published online: 15 July 2004

DOI: 10.1051/epjap:2004081

Electronic properties through contactless characterisation

Microscopic C-V measurements of SOI wafers by scanning capacitance microscopy p. 479

T. Ishida, H. Yoshida and S. Kishino

Published online: 15 July 2004

DOI: 10.1051/epjap:2004134

FeB and CrB pair reassociation kinetics in imperfect Si controlled by contactless lifetime scan maps p. 483

O. Palais, P. Hidalgo and S. Martinuzzi

Published online: 15 July 2004

DOI: 10.1051/epjap:2004048

Room-temperature diffusion of evaporated Fe atom into SOI materials characterized by scanning Kelvin-SPV method p. 487

S. Nakamura, H. Ikeda, D. Watanabe, M. Suhara and T. Okumura

Published online: 15 July 2004

DOI: 10.1051/epjap:2004119-11

Scanning kelvin-probe characterization of heavy metal contamination in patterned SIMOX wafers p. 491

S. Nakamura, H. Ikeda, D. Watanabe, M. Suhara and T. Okumura

Published online: 15 July 2004

DOI: 10.1051/epjap:2004054

Non-contact C-V measurements of ultra thin dielectrics p. 495

P. Edelman, A. Savtchouk, M. Wilson, J. D'Amico, J. N. Kochey, D. Marinskiy and J. Lagowski

Published online: 15 July 2004

DOI: 10.1051/epjap:2004119-12

Interface recombination velocity measurement by a contactless microwave technique p. 499

R. K. Ahrenkiel and J. Dashdorj

Published online: 15 July 2004

DOI: 10.1051/epjap:2004071

Mapping of minority carrier diffusion length and heavy metal contamination with ultimate surface photovoltage method p. 503

J. Lagowski, A. Aleynikov, A. Savtchouk and P. Edelman

Published online: 15 July 2004

DOI: 10.1051/epjap:2004121

EPJ

The European Physical Journal Applied Physics

Volume 27 / No 1-3 (July-September 2004)

Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)

Preface for DRIP X proceedings p. 7

Invited papers

Physical properties of two dimensional nets of quantum InGaAs wires p. 9

Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM p. 13

Ultra thin gate oxide characterization p. 21

Defects in SiC substrates and epitaxial layers affecting semiconductor device performance p. 29

Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods p. 37

Non-destructive optical methods for assessing defects in production of Si or SiGe materials p. 43

Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM p. 49

Defect mapping in full-size multi-crystalline Si wafers p. 55

From photon emission microscopy to Raman spectroscopy: Failure analysis in microelectronics p. 59

Spectroscopic techniques for the assessment of optoelectronic materials: application to laser diodes p. 67

Nanostructures and near-field probe techniques 1

Resonant excitation of Er ion luminescence in a nanocrystalline silicon matrix p. 75

Cathodoluminescence microanalysis of porous GaP and InP structures p. 81

Characteristics of FeSi2 quantum dots on silicon p. 85

Structural and optical characterization of a dispersion of nanocavities in a crystalline silicon matrix p. 89

Nanostructures and near-field probe techniques 2

Lateral conductivity in GaAs/InAs quantum dot structures p. 93

Light induced contrast in Kelvin Force Microscopy of GaN epilayers p. 97

Atomic force microscopy: a powerful tool for surface defect and morphology inspection in semiconductor industry p. 101

Cathodoluminescence study of widegap-semiconductor nanowires p. 107

Defects in silicon

Transformation behavior of metastable defects induced in n-type silicon by hydrogen implantation p. 111

Study of the defects in oxygen implanted silicon subjected to neutron irradiation and high pressure annealing p. 115

Aluminum gettering in photovoltaic silicon p. 119

Dislocation luminescence in plastically deformed silicon crystals: effect of dislocation intersection and oxygen decoration p. 123

Diminution of the activity of B atoms by H-induced defects in H2 and B2H6 co-implanted Si p. 129

Electron irradiation effect on thermal donors in CZ-Si p. 133

Characterization of metastable defects in hydrogen-implanted n-type silicon p. 137

Unusual properties of C-T characteristics of hydrogen implanted and annealed Si p. 141

Thermoelectric properties of Czochralski-grown silicon at high pressure up to 16 GPa p. 145

Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing p. 149

Defect-induced birefringence in crystalline silicon ingots p. 155

Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafers p. 159

Calculation of boron segregation at the Si(100)/SiO2 interface p. 163

Electrical properties

Annealing ambient controlled deep defect formation in InP p. 167

Investigation of compensation defect centres in semi-insulating InP crystals p. 171

Effect of rare earth addition on GaAs-based layers grown by liquid phase epitaxy p. 177

Nonequilibrium carrier dynamics in heavily p-doped GaAs p. 181

Quantitative analysis of low-frequency current oscillation in semi-insulating GaAs p. 185

Effect of crystal defects on the electrical behaviour of InP and SiGe epitaxial structures p. 189

GaN epitaxial layers on inhomogeneous buffer layer: electrical and optical properties p. 193

Study of indium phosphide wafers treated by long time annealing at high temperatures p. 197

Capture kinetics at dislocation-related deep levels in III-V heterostructures p. 201

Morphology and electrical properties of Pb1−xCdxTe/CdTe heterostructures p. 207

DLTS study of deep centers created by Ar-ion bombardment in n- and p-type MBE AlGaAs p. 213

Determination of localized trap parameters in organic semiconductors using charge based deep level transient spectroscopy (Q-DLTS) p. 219

Oxygen in GaAs and its relation to the EL3 defect investigated by TSC and PICTS p. 223

Defects in wide bandgap materials 1

Cathodoluminescence microscopy and spectroscopy of n-type 4H-SiC epilayers p. 227

Structural characterisation of 4H-SiC substrates by cathodoluminescence and X-ray topography p. 231

Microscopic defects and homogeneity investigations in 4H-SiC epitaxial wafers by UV scanning photoluminescence spectroscopy p. 235

Structural and electrical characterization of n+-type ion-implanted 6H-SiC p. 239

Stacking faults in heavily nitrogen doped 4H-SiC p. 243

Defects in wide bandgap materials 2

Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures p. 247

Phonon assignments in GaN bulk p. 251

TEM observation of nanopipes in heteroepitaxial GaN p. 255

Pyramidal defects in highly Mg-doped GaN: atomic structure and influence on optoelectronic properties p. 259

Plastic relaxation through buried cracks in AlGaN/GaN heterostructures p. 263

Optical characterization of bulk GaN silicon and magnesium doped: as grown, hydrogen implanted, and annealed p. 267

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well p. 271

Nanopipes in GaN: photo-etching and TEM study p. 275

Spectroscopic techniques

Raman investigation of stress and phase transformation induced in silicon by indentation at high temperatures p. 279

Luminescence and EPR studies of defects in Si-SiO2 films p. 285

Scanning room temperature photoluminescence in SiNx:H layers p. 289

Temperature measurement by micro-Raman scattering spectroscopy in the active zone of AlGaN/GaN high-electron-mobility transistors p. 293

Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy p. 297

Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods p. 301

The influence of crystal imperfections on the shape of exciton emission spectrum in ZnO single crystals p. 305

Scattering tensors for semiconductors of C46v–P63 mc space group: GaN, ZnO, CdS, ZnS, and BeO p. 309

Investigation of recombination processes involving defect-related states in (Ga,In)(As,Sb,N) compounds p. 313

Mössbauer spectroscopy on Fe impurities in diamond p. 317

Characteristics of FeSi₂ quantum dots on silicon p. 85

Diminution of the activity of B atoms by H-induced defects in H₂ and B₂H₆ co-implanted Si p. 129

Calculation of boron segregation at the Si(100)/SiO₂ interface p. 163

Morphology and electrical properties of Pb_1−xCd_xTe/CdTe heterostructures p. 207

Structural and electrical characterization of n⁺-type ion-implanted 6H-SiC p. 239

Luminescence and EPR studies of defects in Si-SiO₂ films p. 285

Scanning room temperature photoluminescence in SiN_x:H layers p. 289

Scattering tensors for semiconductors of C⁴_6v–P6₃ mc space group: GaN, ZnO, CdS, ZnS, and BeO p. 309

Raman scattering characterization of residual strain and alloy composition in bulk Si_1−xGe_x crystal p. 325

Study of dislocations in strained-Si/Si_0.8Ge_0.2 heterostructures by EBIC, TEM and etching techniques p. 337

Formation of Al_xGa_1−xSb films over GaSb substrates by Al diffusion p. 423

Some structural aspects of Pb_xCd_1−xTe bulk material p. 427

Effect of the p⁺-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers p. 465