Eur. Phys. J. Appl. Phys. 27, 133-135 (2004)
https://doi.org/10.1051/epjap:2004058

Electron irradiation effect on thermal donors in CZ-Si

¹ Kumamoto National College of Technology, 2659-2 Nishigoshi Kumamoto, 861-1102, Japan
² IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
³ University of Hagen, Haldener Str. 182, PO Box 940, D-58084 Hagen, Germany
⁴ E. E. Dept, K. U. Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium

Corresponding author: takakura@ee.knct.ac.jp

Received: 29 June 2003
Accepted: 5 January 2004
Published online: 15 July 2004

Abstract

Electrical properties of the shallow thermal donors (TDs) in n-type CZ-Si diodes by the electron irradiation were investigated. After the electron irradiation, carrier concentration was decreased. From deep level transient spectroscopy (DLTS) measurements, some peaks related to TDs and vacancy-oxygen complexes were observed for the irradiated samples. The peak related to V-O and/or A-center at E_C-0.18 eV increased with the electron fluence. To compare that, the level of E_C-0.09 eV related to TDs was independent of electron fluence. In addition to that, reverse current of the diodes was increased with increasing irradiated electron fluence.