https://doi.org/10.1051/epjap:2004078
Manifestation of defects in phonon spectra of binary zinc-blende compounds
1
Institute of Physics, Rzeszow University, Rejtana 16A, 35-310
Rzeszów, Poland
2
Instytut Fizyki im. Mariana Smoluchowskiego, Uniwersytet Jagielloński,
Reymonta 4, 30-059 Krakow, Poland
3
Institute of Physics PAS, al. Lotnikow 32/46, 02-668 Warsaw, Poland
4
Laboratori Nazionali di Frascati INFN, DAFNE-L lab., C.P. 13,
00044 Frascati (RM), Italy
5
Dipartimento di Informatica, Universita degli Studi di Verona,
Strada Le Grazie 15, 37134 Verona, Italy
6
Dipartimento di Fisica, Universita La Sapienza, p. le A. Moro
2, Rome, Italy
7
Dipartimento di Scienze Geologiche, Universita di Roma-3,
Largo S. Leonardo Murialdo 1, 00146 Rome, Italy
Corresponding author: sheregii@univ.rzeszow.pl
Received:
11
July
2003
Accepted:
10
February
2004
Published online: 15 July 2004
It is interesting to consider the problem of the presence of
defects in the semiconductor binary compounds by observing their
elemental tetrahedron distortions, caused by the creation of
vacancies and interstitial atoms within the tetrahedra and so
on. Our model thus considers the system A(VzxZ
) and
(A
Vay)Z as composed of five defect tetrahedron
configurations where A is a cation atom, Z an anion atom, Va-cation
vacancy, Vz-anion vacancy. In this communication we present far
IR (FIR) spectra obtained at the DAFNE facility of Laboratori
Nazionali di Frascati (INFN) using
its synchrotron radiation. Two samples of CdTe are considered:
sample-1 was grown by the PVT technique and sample-2 using
the same technique but on the basis of, polycrystalline CdTe
previously purified from oxygen in hydrogen atmosphere.
PACS: 61.72.Ji – Point defects (vacancies, interstitials, color centers, etc.) and defect clusters / 61.10.Ht – X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc. / 78.30.Er – Solid metals and alloys
© EDP Sciences, 2004
