https://doi.org/10.1051/epjap:2004100
Structural characterisation of 
4H-SiC substrates by
cathodoluminescence and X-ray topography
1
Laboratoire TECSEN, UMR 6122, Université de Marseille
St Jérome case 231, 13397 Marseille, Cedex 20, France
2
Dpto. Fisica de Materiales, Fac. Ciencias Fisicas - UCM. Ciudad Universitaria,
28040 Madrid, Spain
Corresponding author: phidalgo@fis.ucm.es
Received:
2
July
2003
Accepted:
9
December
2003
Published online: 15 July 2004
Silicon Carbide (SiC) is a wide band gap
semiconductor, having opto-electronic properties that are suitable for
many applications. Some structural defects due to crystal growth
and/or doping technologies are commonly present in the substrates
of SiC. The 
-oriented 4H-SiC bulk wafers are
particularly investigated, due to some advantages with respect to
the (0001)-Si face. One of these advantages is a better crystal
reordering during post-implantation annealing. In this paper
cathodoluminescence (CL) and X-Ray topography measurements have
been carried out in order to investigate the optical and
structural properties of commercial 4H n+-type
substrates.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) / 61.72.-y – Defects and impurities in crystals; microstructure / 78.60.Hk – Cathodoluminescence, ionoluminescence
© EDP Sciences, 2004
