https://doi.org/10.1051/epjap:2004119-4
Optical characterization of bulk GaN silicon and magnesium doped: as grown, hydrogen implanted, and annealed
1
Department of Physics, University of Pretoria, 0001 Pretoria,
South Africa
2
Department of Chemistry, University of Pretoria, 0001 Pretoria, South Africa
3
Department of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61 614
Poznan, Poland
Corresponding author: hkunert@nsnper1.up.ac.za
Received:
4
July
2003
Accepted:
28
January
2004
Published online: 15 July 2004
Two samples, GaN silicon-doped and GaN magnesium-doped, were hydrogen implanted and annealed. The low temperature photoluminescence and inelastic light scattering spectroscopy were employed to investigate structural changes as well as the changes in optical electronic transitions.
PACS: 02.20.-a – Group theory / 63.20-e – Phonons in crystal lattices / 78.55.-m – Photoluminescence, properties and materials
© EDP Sciences, 2004
