Eur. Phys. J. Appl. Phys. 27, 301-303 (2004)
https://doi.org/10.1051/epjap:2003073

Defects in high temperature-pressure treated Czochralski silicon detected by photoluminescence and related methods

¹ Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
² Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland
³ Institute of Physics, PAS, Al. Lotników 32/46, 02-668 Warsaw, Poland

Corresponding author: misiuk@ite.waw.pl

Received: 27 June 2003
Accepted: 31 December 2003
Published online: 15 July 2004

Abstract

Defects in oxygen-containing Czochralski silicon (Cz-Si) subjected to 2-steps pre-annealing at 720–1000 K under 10⁵ Pa and next treated at 1170–1400 K (HT) under high hydrostatic pressure (HP, up to 1.2 GPa) were investigated by photoluminescence, infrared absorption and related methods. Microstructure of HT − HP treated Cz-Si is critically dependent on nucleation centres for oxygen precipitation created by pre-annealing.