Eur. Phys. J. Appl. Phys. 27, 141-144 (2004)
https://doi.org/10.1051/epjap:2004126

Unusual properties of C-T characteristics of hydrogen implanted and annealed Si

¹ Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
² Institute of Semiconductor Physics SB RAN, pr. Lavrentyeva 13, 630090 Novosibirsk, Russia

Corresponding author: kaniew@ite.waw.pl

Received: 10 July 2003
Accepted: 28 January 2004
Published online: 15 July 2004

Abstract

Cz-Si doped with boron was implanted at room temperature with 130 keV H₂-ions at a high dose of 4×10¹⁶ cm⁻². The specimens were annealed at a temperature of 450 °C for 10 h in argon ambient. High frequency (1 MHz) C-T and C-V measurements in the temperature range 80–400 K were carried out to study particular features of damage-related centres in the limit of a heavy damage. The presence of damage-related deep-level defects manifest themselves through several unusual features of C-T(V) curves. Sudden jumps of capacitance and hysteresis effects during sweeping temperature/voltage are unusual indeed and have been reported for the first time. Our experiments by filling and emptying deep-level defects with carriers by proper biasing diodes before the temperature/voltage sweep have revealed that the particular features are due to changes in the deep level occupation. The results presented give direct experimental evidence that the damage-induced deep-level defects themselves control the quasi-Fermi level position.