Eur. Phys. J. Appl. Phys. 34, 71-71 (2006)
https://doi.org/10.1051/epjap:2006041

All the physical and electrical parameters of the MOS transistor on a single graph (QΨ)

Département de Physique, Université Joseph Fourier, Grenoble, France
Laboratoire de Technologie de la Microélectronique, 17 avenue des Martyrs, 38054 Grenoble 9, France

Corresponding author: gilbert.belledonne@wanadoo.fr

Received: 11 March 2006
Published online: 15 April 2006

This article has no abstract.