Eur. Phys. J. Appl. Phys. 34, 77-80 (2006)
https://doi.org/10.1051/epjap:2006047

Characteristics of Ga₂O₃ nanomaterials grown on chromium substrates

School of Materials Science and Engineering, Inha University, Incheon 402-751, Korea

Corresponding author: hwkim@inha.ac.kr

Received: 16 March 2005
Revised: 22 December 2005
Accepted: 23 December 2005
Published online: 25 May 2006

Abstract

We produced gallium oxide (Ga₂O₃) nanomaterials with various widths on chromium (Cr) substrates by the thermal evaporation of GaN powders. We characterized the samples using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy and photoluminescence spectroscopy. The results showed that the products consisted of belt-like Ga₂O₃ nanomaterials, which had monoclinic structures. The photoluminescence spectrum showed a blue light emission.