Room temperature emission from Er-doped silicon-rich oxide microtorus

J. Verbert; F. Mazen; T. Charvolin; E. Picard; V. Calvo; P. Noé; J.-M. Gérard; E. Hadji; F. Orucevic; J. Hare; V. Lefèvre-Seguin

doi:10.1051/epjap:2006048

EPJ

Room temperature emission from Er-doped silicon-rich oxide microtorus

J. Verbert¹, F. Mazen¹, T. Charvolin¹, E. Picard¹, V. Calvo¹, P. Noé¹, J.-M. Gérard¹, E. Hadji¹, F. Orucevic², J. Hare² and V. Lefèvre-Seguin²

¹ Département de Recherche Fondamentale sur la Matière Condensée, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
² Laboratoire Kastler Brossel, Département de Physique de l'École Normale Supérieure, 24 rue Lhomond, 75231 Paris Cedex 05, France

Received: 31 January 2006
Accepted: 9 March 2006
Published online: 25 May 2006

Abstract

We report on the integration of erbium doped silicon-rich oxide into toroidal microcavities. Coupling of erbium ions to microtorus whispering gallery modes is evidenced at room temperature under excitation of silicon clusters. The fabrication process is controlled so that no luminescence quenching occurs during the silica melting step. The spatial and spectral distributions of outgoing light are investigated thanks to independent excitation and collection optics.

PACS: 42.55.Sa – Microcavity and microdisk lasers / 42.72.Ai – Infrared sources / 78.55.-m – Photoluminescence, properties and materials / 81.07.-b – Nanoscale materials and structures: fabrication and characterization

12 Internat. Congress of the Balkan Physical Union
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EPJ

Room temperature emission from Er-doped silicon-rich oxide microtorus

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