Eur. Phys. J. Appl. Phys. 35, 13-15 (2006)
https://doi.org/10.1051/epjap:2006069

Indium oxide violet photodiodes

Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan, Republic of China

Corresponding author: ocean@ntut.edu.tw

Received: 30 January 2006
Revised: 19 April 2006
Accepted: 28 April 2006
Published online: 6 July 2006

Abstract

Indium oxide (In₂O₃) violet photodiodes were fabricated. The In₂O₃ layers were from oxidation of InN deposited by magnetron reactive sputtering. It was found the photocurrent approximately 5.06 × 10⁻⁴ A at a bias of 2 V and a photocurrent to dark current contrast ratio higher than around two orders of magnitude. The reverse leakage current prior to breakdown is around 10⁻⁵ A. The photodiodes exhibited a narrow responsive region at wavelength from 400 nm to 440 nm. The values of responsivity and quantum efficiency (QE) at 420 nm at biases of 2 V were 0.1985 A/W and 58.62%, respectively.