https://doi.org/10.1051/epjap:2006093
Effect of Ag additive on the density of localized states in Se-Ge glassy alloy
1
Department of Physics, Harcourt Butler Technological Institute,
Kanpur – 208 002, India
2
Department of Physics, Christ Church College, Kanpur
– 208 001, India
Corresponding author: dr_ashok_kumar@yahoo.com
Received:
16
February
2006
Revised:
5
April
2006
Accepted:
4
May
2006
Published online:
2
September
2006
The present paper reports the measurements on space
charge limited conduction in amorphous thin films of
Ge20Se
Agx (x = 0, 10, 15, 20). I−V characteristics have been
measured at various fixed temperatures. These characteristics show that, at
low electric fields, an ohmic behaviour is observed. However, at high
electric fields (E ~ 104 V/cm), the current becomes superohmic.
At high fields (104 V/cm), current could be fitted to the theory of
space charge limited conduction (SCLC) in case of uniform distribution of
localized states in the mobility gap of these materials. Using the theory of
SCLC for the uniform distribution of the traps, the density of localized
states near Fermi level is calculated. It is observed that, on addition of
Ag in Ge20Se80 alloy, density of localized states first increases
till 10 at% of Ag and then decreases.
PACS: 72.80.Ng – Disordered solids / 61.43.Fs – Glasses / 61.43.Dq – Amorphous semiconductors, metals, and alloys
© EDP Sciences, 2006
