Photoluminescence study of nitrogen effects on confined states in GaAs1−xNxGaAs quantum wells

I. Dhifallah; S. Aloulou; A. Bardaoui; J. C. Harmand; R. Chtourou

doi:10.1051/epjap/2009107

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Applied Physics

Eur. Phys. J. Appl. Phys. 47, 30302 (2009)
https://doi.org/10.1051/epjap/2009107

Photoluminescence study of nitrogen effects on confined states in GaAs_1−xN_xGaAs quantum wells

I. Dhifallah¹, S. Aloulou¹, A. Bardaoui¹, J. C. Harmand² and R. Chtourou¹

¹ Laboratoire de Photovoltaïque, des Semiconducteurs et des Nanostructures, Centre de Recherche et des Technologies de l'Énergie, BP 95, Hammam-Lif 2050, Tunisia
² Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France

Corresponding author: ines.dhifallah@gmail.com

Received: 10 February 2009
Accepted: 7 April 2009
Published online: 12 June 2009

Abstract

Modulation doped heterostructures GaAs/GaAs $_{1-x}$ N_x/GaAs/Al_0.3Ga_0.7As:δSi with GaAs $_{1-x}$ N_x Quantum Wells (QW) with different nitrogen contents x have been grown by molecular beam epitaxy and investigated by photoluminescence (PL) spectroscopy. We have found that at low temperature the photoluminescence spectra are essentially formed by two structures observed at 1.51 eV and 1.47 eV attributed to excitonic transitions in GaAs layer, and in GaAs $_{1-x}$ N_x QW, respectively. The Band Anticrossing Model (BAC) has been adopted in order to confirm the nature of the transitions in GaAs $_{1-x}$ N_x QW's. The band structure of $\delta$ -doped GaAs/GaAs $_{1-x}$ N_x/GaAs/Al_0.3Ga_0.7As:δSi has been studied theoretically by using the finite differences method to self-consistently and simultaneously solve Schrödinger and Poisson equations written within the Hartree approximation. We find in this way good agreement between our measured and our calculated values for the transition energies in our GaAs $_{1-x}$ N_x QW's.