https://doi.org/10.1051/epjap/2010085
Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate
1
Laboratoire de Micro-Optoélectroniques et Nanostructures,
Faculté des Sciences de Monastir, Avenue de l'Environnement, 5000 Monastir, Tunisia
2
Institut d'Électronique de Microélectronique et de
Nanotechnologie IEMN (TIGER), Département hyperfréquences et
Semiconducteurs, Université des Sciences et Technologies de Lille, Avenue Poincaré, 59652 Villeneuve d'Ascq Cedex, France
Corresponding author: gassoumimalek@yahoo.fr
Received:
17
March
2010
Revised:
3
May
2010
Accepted:
17
May
2010
Published online:
24
June
2010
AlGaN/GaN high electron mobility transistors (HEMTs) with sapphire (Al2O3) substrates reveal anomalies like kink effect, current collapse, hysteresis phenomena on Ids-Vds and Ids-Vgs. These parasitic effects can be attributed to the presence of traps in the hetero-structure. Deep defects analysis was performed by conductance deep level transient spectroscopy (CDLTS) under drain pulse. Four electron traps have been detected with activation energy and capture cross-section of 2.62 eV, 1.18 eV, 0.97 eV, 0.48 eV, σn = 2.4 × 10-17 cm2 and σn = 2.37 × 10-14 cm2, σn = 2 × 10-12 cm2 and σn = 4.67 × 10-14 cm2 respectively. The localisation and the identification of these traps have occurred and a correlation between defects and parasitic effects has been discussed.
© EDP Sciences, 2010
