https://doi.org/10.1051/epjap/2012110483
The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters
Faculty of Sciences and Arts, Department of Physics, Süleyman Demirel University, 32260 Isparta, Turkey
a e-mail: ozdemir@fef.sdu.edu.tr
Received:
23
December
2011
Revised:
23
March
2012
Accepted:
5
September
2012
Published online:
10
October
2012
The current-voltage (I-V) characteristic of the Au/n-GaAs/Au-Ge Schottky diode with native oxide interfacial layer has been studied as a function of hydrostatic pressure. The ideality factor and barrier height of the diode have shown hydrostatic pressure dependence. The pressure coefficient of the flat-band barrier height was found to be 10.3 meV/kbar and the flat-band barrier height at zero pressure was calculated as 0.854 eV. Additionally, the energy distribution of interface state density was determined from I-V characteristics for each hydrostatic pressure value.
© EDP Sciences, 2012
