The European Physical Journal Applied Physics

Volume 60 / No 1 (October 2012)

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Physics and Mechanics of Fluids, Microfluidics

Preliminary investigation of the damping effect of bubble levels used in dynamic conditions 11101

P. Pinot and G. Genevès

Published online: 10 October 2012

DOI: 10.1051/epjap/2012120230

Nanomaterials and Nanotechnologies

Swift heavy ion-induced silicon dioxide nanostructuration: experimental observation of velocity effect 10402

A.D. Touboul, A. Privat, R. Arinero, F. Wrobel, E. Lorfèvre and F. Saigné

Published online: 05 November 2012

DOI: 10.1051/epjap/2012120349

Non-faradic carbon nanotube-based supercapacitors: state of the art - Analysis of all the main scientific contributions from 1997 to our days 10401

P. Bondavalli, D. Pribat, J.-P. Schnell, C. Delfaure, L. Gorintin, P. Legagneux, L. Baraton and C. Galindo

Published online: 31 October 2012

DOI: 10.1051/epjap/2012120242

Physics of Organic Materials and Devices

Impact ionization coefficients of 4H- and 6H-SiC 10204

C.C. Sun, A.H. You and E.K. Wong

Published online: 23 October 2012

DOI: 10.1051/epjap/2012120107

Post breakdown and lifetime of low density polyethylene film under generated transient charge packets 10203

I. Boukhris, E. Belgaroui and A. Kallel

Published online: 23 October 2012

DOI: 10.1051/epjap/2012120176

Study of ultrathin film of gold nanocomposite polyaniline for CO₂ and NH₃ gas sensing properties 10202

P.J. Saikia, P.C. Sarmah and A. Rahman

Published online: 23 October 2012

DOI: 10.1051/epjap/2012110384

Fabrication and characterization of nonvolatile organic thin film memory transistors operating at low programming voltages 10201

S.J. Fakher and M.F. Mabrooka

Published online: 10 October 2012

DOI: 10.1051/epjap/2012120288

Semiconductors and Devices

Effect of thermal treatments on the morphological and optoelectronic properties of the silicon nanowires 10105

M. Karyaoui, H. Kaouach, S. Ben Yahya, W. Dimassi, J.C. Harmand and M. Amlouk

Published online: 31 October 2012

DOI: 10.1051/epjap/2012120219

Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe₂ Schottky diodes 10104

A. Bobby, P.S. Gupta and B.K. Antony

Published online: 31 October 2012

DOI: 10.1051/epjap/2012120343

DC and RF characteristics of bilayer Schottky metal contact on n-GaN Schottky diode 10103

T. Munir, A. Abdul Aziz, M.J. Abdullah and M.F. Ain

Published online: 31 October 2012

DOI: 10.1051/epjap/2012120316

In situ structural studies on orthorhombic SnS micro-crystals 10102

N. Koteeswara Reddy, M. Devika, M. Prashantha, K. Ramesh and K.R. Gunasekhar

Published online: 05 November 2012

DOI: 10.1051/epjap/2012120259

The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters 10101

A.F. Özdemir, T. Özsoy, Y. Kansız, M. Sancak, A. Kökce, N. Uçar and D.A. Aldemir

Published online: 10 October 2012

DOI: 10.1051/epjap/2012110483

EPJ

The European Physical Journal Applied Physics

Volume 60 / No 1 (October 2012)

Physics and Mechanics of Fluids, Microfluidics

Preliminary investigation of the damping effect of bubble levels used in dynamic conditions 11101

Nanomaterials and Nanotechnologies

Swift heavy ion-induced silicon dioxide nanostructuration: experimental observation of velocity effect 10402

Non-faradic carbon nanotube-based supercapacitors: state of the art - Analysis of all the main scientific contributions from 1997 to our days 10401

Physics of Organic Materials and Devices

Impact ionization coefficients of 4H- and 6H-SiC 10204

Post breakdown and lifetime of low density polyethylene film under generated transient charge packets 10203

Study of ultrathin film of gold nanocomposite polyaniline for CO₂ and NH₃ gas sensing properties 10202

Fabrication and characterization of nonvolatile organic thin film memory transistors operating at low programming voltages 10201

Semiconductors and Devices

Effect of thermal treatments on the morphological and optoelectronic properties of the silicon nanowires 10105

Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe₂ Schottky diodes 10104

DC and RF characteristics of bilayer Schottky metal contact on n-GaN Schottky diode 10103

In situ structural studies on orthorhombic SnS micro-crystals 10102

The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters 10101

Conference announcements

EPJ

The European Physical Journal Applied Physics

Volume 60 / No 1 (October 2012)

Physics and Mechanics of Fluids, Microfluidics

Preliminary investigation of the damping effect of bubble levels used in dynamic conditions 11101

Nanomaterials and Nanotechnologies

Swift heavy ion-induced silicon dioxide nanostructuration: experimental observation of velocity effect 10402

Non-faradic carbon nanotube-based supercapacitors: state of the art - Analysis of all the main scientific contributions from 1997 to our days 10401

Physics of Organic Materials and Devices

Impact ionization coefficients of 4H- and 6H-SiC 10204

Post breakdown and lifetime of low density polyethylene film under generated transient charge packets 10203

Study of ultrathin film of gold nanocomposite polyaniline for CO2 and NH3 gas sensing properties 10202

Fabrication and characterization of nonvolatile organic thin film memory transistors operating at low programming voltages 10201

Semiconductors and Devices

Effect of thermal treatments on the morphological and optoelectronic properties of the silicon nanowires 10105

Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe2 Schottky diodes 10104

DC and RF characteristics of bilayer Schottky metal contact on n-GaN Schottky diode 10103

In situ structural studies on orthorhombic SnS micro-crystals 10102

The analysis of hydrostatic pressure dependence of the Au/native oxide layer/n-GaAs/Au-Ge Schottky diode parameters 10101

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Conference announcements

Study of ultrathin film of gold nanocomposite polyaniline for CO₂ and NH₃ gas sensing properties 10202

Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe₂ Schottky diodes 10104