https://doi.org/10.1051/epjap/2012120107
Impact ionization coefficients of 4H- and 6H-SiC
1
Centre for Diploma Programmes, Multimedia University, Jalan Ayer Keroh Lama, 75450 Melaka, Malaysia
2
Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh Lama, 75450 Melaka, Malaysia
a e-mail: ccsun@mmu.edu.my
Received:
22
March
2012
Revised:
21
June
2012
Accepted:
27
September
2012
Published online:
23
October
2012
The Monte Carlo (MC) simulation of electron and hole impact ionization rates for 4H- and 6H-SiC in high electric field is presented. This work focuses on the study of impact ionization rates and impact ionization coefficients since these parameters play a very important role in determining the device performance. In our simulation, the impact ionization rates are obtained by using modified Keldysh equation with a softness factor fitted to the experimental data described by other researchers. The electron and hole impact ionization coefficients in 4H- and 6H-SiC are parameterized at high electric field. The electron and hole impact ionization coefficients for a wide range of electric fields have been successfully derived in our model.
© EDP Sciences, 2012
