Eur. Phys. J. Appl. Phys. (2012) 60: 10103
https://doi.org/10.1051/epjap/2012120316

DC and RF characteristics of bilayer Schottky metal contact on n-GaN Schottky diode

¹ School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia
² School of Electrical and Electronics Engineering, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia

^a e-mail: tariqmunir76@yahoo.com

Received: 3 August 2012
Accepted: 25 September 2012
Published online: 31 October 2012

Abstract

In device technology, the multilayer contacts provide improved performance. The comparative study of different high work function bilayer Schottky metal (Pt/Pd, Pt/Ni and Pt/Ti) contact has been taken to study the DC and RF performance of n-GaN Schottky diode. The fabricated Schottky metal contact Pt/Pd, Pt/Ni and Pt/Ti annealed from room temperature to 800 °C studied shows that Pt/Pd Schottky metal contact on n-GaN shows high thermal stability and maximum barrier height 1.10 eV, ideality factor 1.001, lower series resistance and lower insertion loss (S₂₁ dB) at high frequency compared to Pt/Ni and Pt/Ti bilayer Schottky metal contact.