https://doi.org/10.1051/epjap/2013130053
Electrical contact resistance of a thin oxide layer with a low mechanical load
1
Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Republic of Korea
2
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Republic of Korea
a e-mail: bandy1@kaist.ac.kr
Received:
30
January
2013
Revised:
22
May
2013
Accepted:
16
September
2013
Published online:
9
December
2013
The electrical contact resistance of a vertical binary contact between stainless steel balls with a low mechanical load was investigated. Using a statistical approach, we measured the voltage at which the dielectric breakdown occurs within a thin surface oxide layer and the distribution of the contact resistance. Electrical load-bearing conduction through a thin insulating layer was found to occur through two possible sequential processes. In both cases, once a conduction path is formed, the melting of bridges as in conventional contact theory is involved. This suggests that conduction through an oxide layer with a low mechanical load depends mainly on breakdown-induced bridges. Furthermore, the distribution of such path’s resistance shows the log-normal distribution with a long tail toward high resistance.
© EDP Sciences, 2013
