Eur. Phys. J. Appl. Phys. 92, 30302 (2020)
https://doi.org/10.1051/epjap/2020200207

Regular Article

Assembly of efficient Ag/n-Si/Cu₂CdSnS₄/Au for photovoltaic cell utilities^★

¹ Department of Physics, Faculty of Science, King Khalid University, Abha, Kingdom of Saudi Arabia
² Department of Chemistry, Faculty of Science, Jazan University, Saudi Arabia
³ Chemical Industries Research Division, Applied Organic Chemistry Department, National Research Centre, 33 EL Buhouth St., Dokki, Giza 12622, Egypt

^* e-mail: mardia.elsayed2016@gmail.com

Received: 28 June 2020
Received in final form: 5 October 2020
Accepted: 5 November 2020
Published online: 17 December 2020

Abstract

Assembly of earth-abundant and cheap kesterite thin films is significant to produce inexpensive photovoltaic cells. Here, uniform, crystalline Cu₂CdSnS₄ (CCTS₄) thin films were deposited on commercial glass substrate by spray pyrolysis method with thickness (215, 246, 328 and 385) at 450 °C. The structural, optical, electrical, and photovoltaic studies of the deposited CCTS₄ films were tested by different analysis. The various values of structural constants of CCTS₄ films were examined with film thickness. The XRD experiments appeared that the CCTS₄ films prove a polycrystalline nature and tetragonal shape. The CCTS₄ films observed a direct optical transition and decreased with film thickness increased. The thickness 385 nm of CCTS₄ thin film was selected to fabricate the Ag/n-Si/CCTS₄/Au Hetero-Junction because it exhibits high values of absorption coefficient and optical conductivity. The fabricated CCTS₄/n-type Si Hetero-Junction showed efficiency about 4.1%.