Eur. Phys. J. Appl. Phys. 92, 30301 (2020)
https://doi.org/10.1051/epjap/2020200274

Regular Article

Characterization of silver doped In₂S₃ films

¹ Department of Electrical Engineering, Faculty of Ghazi Tabatabai, West Azarbaijan Branch, Technical and Vocational University, Urmia, Iran
² Young Researchers and Elite Club Islamic Azad University, Urmia Branch, Urmia, Iran
³ Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, Iran

^* e-mail: parisa.esmaili2018@gmail.com

Received: 24 August 2020
Received in final form: 18 October 2020
Accepted: 20 October 2020
Published online: 27 November 2020

Abstract

Silver doped Indium sulphide thin films with different [Ag/In] molar ratio concentrations (0, 0.9, 1.0, 1.1) were deposited on glass substrates using chemical bath deposition method. The structural, morphological, optical and electrical properties are characterized using XRD, EDAX, SEM, AFM, spectrophotometer and Hall measurement system, respectively. Kramers-Kronig method was used to obtain optical constants of the films. It is found that Ag can change physical properties of Indium sulfide thin films, depending on the Ag concentration. XRD results show the incorporation of Ag concentration did not change the structure of In₂S₃. Doped films had rough surfaces. As the [Ag/In] molar ratio increased, conductivity increases and optical direct band gap energy decreases from 2.75 to 2.38 eV.