Effect of annealing time on different properties of the next generation Cu2Ni0.50Co0.50SnS4Thin films

Abdelaziz Abali; Abdelkader El kissani; Safia Drissi; Driss Ait lhaj; Said Elmassi; Lhocin Amiri; Lahcen Nkhaili; Kassem El Assali; Abdelkader Outzourhit

doi:10.1051/epjap/2022220068

2022 Impact factor 1.0

Applied Physics

Special issue on ‘Materials for Energy Harvesting, Conversion, Storage, Environmental Engineering and Sustainability’, edited by M. El Ganaoui, M. El Jouad, R. Bennacer and J.M. Nunzi

Eur. Phys. J. Appl. Phys. 97, 47 (2022)
https://doi.org/10.1051/epjap/2022220068

Regular Article

Effect of annealing time on different properties of the next generation Cu₂Ni_0.50Co_0.50SnS₄Thin films

Abdelaziz Abali¹^*, Abdelkader El kissani¹, Safia Drissi¹, Driss Ait lhaj¹^,2, Said Elmassi¹, Lhocin Amiri¹, Lahcen Nkhaili¹, Kassem El Assali¹ and Abdelkader Outzourhit¹

¹ Laboratory of Materials, Energy and Environment (LMEE), Cadi Ayyad University, PB, 2390, Marrakech, Morocco
² Materials and Energy Laboratory, Polydisciplinary Faculty of Ouarzazate, Ibn Zohr University, Morocco

^* e-mail: abdeaabali@gmail.com

Received: 18 March 2022
Received in final form: 9 May 2022
Accepted: 24 May 2022
Published online: 12 August 2022

Abstract

In this report, the Multifunctional Quinary Cu₂Ni_0.50Co_0.50SnS₄ synthesized by a cheap and easy-to-use technique using spin-coating on glass substrates. XRD spectra of Cu₂Ni_0.50Co_0.50SnS₄ annealing at 300 °C demonstrated the structure similar to that of Cu₂NiSnS₄ and Cu₂CoSnS₄ for 60 min and 90 min. The Raman scattering demonstrated the existence of Raman Cu₂Ni_0.50Co_0.50SnS₄ peaks positioned at 286 and 331 cm⁻¹ which allows us to tell the structure of Cu₂Ni_0.50Co_0.50SnS₄ similar only to Cu₂NiSnS₄. The EDS studies demonstrated a quasi-stoichiometry of the Cu₂Ni_0.50Co_0.50SnS₄ annealed sample with a low effect of annealing time on stoichiometry. The scanning electron microscope showed nearly uniform, dense and rough surface morphology with some voids. UV-visible-NIR spectroscopy revealed the gap energy of Cu₂Ni_0.50Co_0.50SnS₄ absorbent layers annealed at 300 °C for 60 min is 1.38 eV, which is very close to the optimal value of the solar spectrum signed by Shockley-Queisser. These results are ideally suited for low-cost, soil-abundant and non-toxic materials for photovoltaic applications.