https://doi.org/10.1051/epjap:2004084
Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafers
1
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
2
IHP/BTU Joint Lab, Universitätsplatz 3-4, 03044 Cottbus,
Germany
3
BTU, Universitätsplatz 3-4, 03044 Cottbus, Germany
4
Wacker Siltronic AG
(Present name: Siltronic AG) , PO Box
1140, 84479 Burghausen, Germany
5
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2,
06120 Halle, Germany
Corresponding author: akhmetov@tu-cottbus.de
Received:
23
July
2003
Accepted:
10
February
2004
Published online: 15 July 2004
Spatial distribution and properties of oxide were examined in
300 mm nitrogen (N) doped CZ-Si. Experimentally grown materials
with N ranging from
~ 1013 cm−3 to 1015 cm−3 were studied by
infrared light scattering tomography, scanning infrared microscopy,
transmission electron microscopy and electron beam induced current.
It was established that an increasing N content improves the
uniformity of the radial distribution of precipitates in the bulk of
the wafer, the density of precipitates reaching a level of
~ 109 cm−3. The width of the denuded zone varies in the
range from 
m to 
m depending on radial position and
N doping level. Electron microscopy revealed lower oxide precipitate
densities of about 105 to 108 cm−3. The results are
interpreted in terms of existence of agglomerates of nanometer size
precipitate nuclei and/or by the defect-induced strain relaxation
around the precipitates.
PACS: 61.72.Yx – Interaction between different crystal defects; gettering effect / 61.72.Qq – Microscopic defects (voids, inclusions, etc.) / 78.35.+c – Brillouin and Rayleigh scattering; other light scattering
© EDP Sciences, 2004
