Eur. Phys. J. Appl. Phys. 27, 163-166 (2004)
https://doi.org/10.1051/epjap:2004136

Calculation of boron segregation at the Si(100)/SiO₂ interface

Department of Electronics and Information Systems, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan

Corresponding author: furuhashi@eie.eng.osaka-u.ac.jp

Received: 10 July 2003
Accepted: 13 February 2004
Published online: 15 July 2004

Abstract


The stability of B atom near the Si(100)/SiO₂ interface during annealing is studied by using ab initio calculation to investigate the atomic scale mechanism of B segregation at the Si(100)/SiO₂ interface. Contrary to the experimental observations showing that B atoms segregate into SiO₂, B atoms are found to be stable in Si free of defects. But authors can rephrase differently this sentence. On the other hand, when an O vacancy exists in SiO₂, the B atom is trapped by the O vacancy and becomes quite stable in SiO₂.