https://doi.org/10.1051/epjap:2005055
Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structures
1
Université Mohamed Premier, Faculté des Sciences, Dépt
de Physique, (L.E.A.A), route Sidi Maafa, BP 524, Oujda, Morocco
2
Laboratoire d'Analyse et d'Architecture des Systèmes
(LAAS-CNRS), 7 avenue du colonel Roche, 31077 Toulouse, France
Corresponding authors: khkassmi@yahoo.fr kassmi@sciences.univ-oujda.ac.ma
Received:
11
November
2004
Revised:
26
April
2005
Accepted:
17
May
2005
Published online:
14
September
2005
In this paper, we present the theoretical and experimental results of the
influence of a charge trapped in ultra-thin oxide of metal/ultra-thin
oxide/semiconductor structures (MOS) on the I(Vg) current-voltage
characteristics when the conduction is of the Fowler-Nordheim (FN) tunneling
type. The charge, which is negative, is trapped near the cathode
(metal/oxide interface) after constant current injection by the metal
(Vg<0). Of particular interest is the influence on the 
(Vg)
shift over the whole I(Vg) characteristic at high field (greater than the
injection field (>12.5 MV/cm)). It is shown that the charge centroid
varies linearly with respect to the voltage Vg. The behavior at low field
(<12.5 MV/cm) is analyzed in référence A. Aziz, K. Kassmi, Ka. Kassmi, F. Olivié, Semicond. Sci. Technol. 19, 877 (2004) and considers that the trapped charge
centroid is fixed.
The results obtained make it possible to analyze the influence of the
injected charge and the applied field on the centroid position of the
trapped charge, and to highlight the charge instability in the ultra-thin
oxide of MOS structures.
PACS: 73.40.Qv – Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
© EDP Sciences, 2005
