https://doi.org/10.1051/epjap/2022210266
Regular Article
A simple method to calculate incident dose for the proximity effect correction
1
Institute of Microelectronics Chinese Academy of Sciences, Beijing 100029, P.R. China
2
University of Chinese Academy of Sciences, Beijing 100049, P.R. China
3
School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P.R. China
4
Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, P.R. China
* e-mail: weiyayi@ime.ac.cn
Received:
23
November
2021
Received in final form:
23
January
2022
Accepted:
22
February
2022
Published online: 1 June 2022
A simple method for correcting the proximity effect (PEC) is demonstrated. By modifying the discretized point spread function (PSF), the incident dose is expressed as a function of the ideal deposition energy density, the backscattering energy and the center energy fraction of the PSF matrix. The optimum incident dose can thus be solved iteratively. Then, the constraint to the iterative equation is discussed and the allowed value range of the center energy fraction in the discretized PSF is calculated under the different pattern densities. The correcting result is finally experimental verified. Results showed the line width deviation from the mean is decreased from the maximum of 0.01 μ. to that of below 0.003 μ.m after the PEC applied. The improved critical dimension (CD) uniformity indicating a uniformity energy distribution is achieved by this method.
© EDP Sciences, 2022
