The European Physical Journal Applied Physics (EPJ AP)

Regular Article

Sensitivity of germanium content on growth conditions of silicon-germanium nanoparticles prepared in nonthermal capacitively-coupled plasmas

Md. Seraj Uddin, C. Vijayan and Jatindra Kumar Rath

Published online: 06 August 2020

DOI: 10.1051/epjap/2020190302

Regular Article

Hole trapping capability of silicon carbonitride charge trap layers

Kiyoteru Kobayashi and Hiroshi Mino

Published online: 14 July 2020

DOI: 10.1051/epjap/2020190297

Regular Article

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

Alessandro Fantoni, João Costa, Paulo Lourenço and Manuela Vieira

Published online: 07 July 2020

DOI: 10.1051/epjap/2020190250

Regular Article

A study of the effect of morphology on the optical and electrical properties of TiO₂ nanotubes for gas sensing applications

Alba Arenas-Hernandez, Carlos Zúñiga-Islas and Julio César Mendoza-Cervantes

Published online: 07 July 2020

DOI: 10.1051/epjap/2020190267

Regular Article

Silver photodiffusion into amorphous Ge chalcogenides - Excitation photon energy dependence of the kinetics probed by neutron reflectivity

Yoshifumi Sakaguchi, Takayasu Hanashima, Al-Amin Ahmed Simon and Maria Mitkova

Published online: 01 July 2020

DOI: 10.1051/epjap/2020190368

Regular Article

Light-induced defect creation processes and light-induced defects in hydrogenated amorphous silicon

Kazuo Morigaki

Published online: 26 June 2020

DOI: 10.1051/epjap/2020190257

Regular Article

Reduction of residual stress in polymorphous silicon germanium films and their evaluation in microbolometers

Ricardo Jimenez, Mario Moreno, Alfonso Torres, Roberto Ambrosio, Aurelio Heredia and Arturo Ponce

Published online: 23 April 2020

DOI: 10.1051/epjap/2020190245

Regular Article

Synthesis and surface modification of light emitting silicon nanoparticles using non-thermal plasma techniques

Martin Müller, Pavel Galář, Jiří Stuchlík, Jan Kočka, Jonáš Kupka and Kateřina Kůsová

Published online: 15 April 2020

DOI: 10.1051/epjap/2020190263

Regular Article

Effect of heat treatments on the electronic properties of indium sulfide films

Tamihiro Gotoh

Published online: 09 April 2020

DOI: 10.1051/epjap/2020190240

Regular Article

Investigation on the luminescent stability in amorphous silicon oxynitride systems

Pengzhan Zhang, Sake Wang, Kunji Chen and Xinglong Wu

Published online: 09 April 2020

DOI: 10.1051/epjap/2020190258

Regular Article

SEM, EDX spectroscopy and real-time optical microscopy of electroformed silicon nitride-based light emitting memory device

Mustafa Anutgan, Tamila Anutgan and Ismail Atilgan

Published online: 07 April 2020

DOI: 10.1051/epjap/2020190300

Regular Article

Photoconductivity kinetics of indium sulfofluoride thin films

Yuri Vygranenko, Miguel Fernandes, Manuela Vieira, Guilherme Lavareda, Carlos Nunes de Carvalho, Pedro Brogueira and Ana Amaral

Published online: 01 April 2020

DOI: 10.1051/epjap/2020190265

Regular Article

Defect absorption in selenium films by photothermal deflection spectroscopy

Tamihiro Gotoh

Published online: 27 March 2020

DOI: 10.1051/epjap/2020190247

Regular Article

Study of nanocrystalline silicon-germanium for the development of thin film transistors

Arturo Torres, Mario Moreno, Pedro Rosales, Miguel Dominguez, Alfonso Torres, Alfredo Morales, Adrian Itzmoyotl and Javier de la Hidalga

Published online: 27 March 2020

DOI: 10.1051/epjap/2020190264

Regular Article

Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors

Chisato Niikura, Yuta Shiratori and Shinsuke Miyajima

Published online: 27 March 2020

DOI: 10.1051/epjap/2020190299

Regular Article

Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles

Zdenek Remes, Jiri Stuchlik, The-ha Stuchlikova, Jaroslav Kupcik, Vincent Mortet, Andrew Taylor, Petr Ashcheulov and Vladimir Alekseevich Volodin

Published online: 03 March 2020

DOI: 10.1051/epjap/2020190253

Regular Article

Transmission electron microscope imaging of plasma grown electroformed silicon nitride-based light emitting diode for direct examination of nanocrystallization

Tamila Anutgan, Mustafa Anutgan and İsmail Atilgan

Published online: 19 February 2020

DOI: 10.1051/epjap/2020190298

EPJ

The European Physical Journal - Applied Physics

Disordered Semiconductors: Physics and Applications

Sensitivity of germanium content on growth conditions of silicon-germanium nanoparticles prepared in nonthermal capacitively-coupled plasmas

Hole trapping capability of silicon carbonitride charge trap layers

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

A study of the effect of morphology on the optical and electrical properties of TiO₂ nanotubes for gas sensing applications

Silver photodiffusion into amorphous Ge chalcogenides - Excitation photon energy dependence of the kinetics probed by neutron reflectivity

Light-induced defect creation processes and light-induced defects in hydrogenated amorphous silicon

Reduction of residual stress in polymorphous silicon germanium films and their evaluation in microbolometers

Synthesis and surface modification of light emitting silicon nanoparticles using non-thermal plasma techniques

Effect of heat treatments on the electronic properties of indium sulfide films

Investigation on the luminescent stability in amorphous silicon oxynitride systems

SEM, EDX spectroscopy and real-time optical microscopy of electroformed silicon nitride-based light emitting memory device

Photoconductivity kinetics of indium sulfofluoride thin films

Defect absorption in selenium films by photothermal deflection spectroscopy

Study of nanocrystalline silicon-germanium for the development of thin film transistors

Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors

Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles

Transmission electron microscope imaging of plasma grown electroformed silicon nitride-based light emitting diode for direct examination of nanocrystallization

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